Masterthesis: GaN-Based RF Power Devices & Circuits

At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us? In our microelectronics department we offer a master thesis in the field of GaN power electronics. What you do: Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas: Packaged / integrated high-power amplifiers with output power levels in the kW-range. Integrated power amplifiers (e.g. Doherty PAs, Wideband PAs) for SatCom or 5G/6G. Multi-functional transceiver MMICs and their individual building blocks (e.g., LNAs, PAs, mixers, frequency multipliers, phase shifters, attenuators, power detectors, …). Design and optimization of active devices (diodes, HEMTs) for emerging applications and frequency bands. Characterization and thermal / electrical modeling of active and passive devices.