Overview

A PhD position in Electrical Engineering, Chemistry, Physics at Eindhoven University of Technology, based in Eindhoven, Netherlands. Applications close on 10 Nov 2026. The listing states that the position is paid.

Key facts

Opportunity type: PhD position
Organization: Eindhoven University of Technology
Location: Eindhoven, Netherlands
Field / discipline: Electrical Engineering, Chemistry, Physics
Application deadline: 10 Nov 2026
Funding / compensation: Paid
Duration: See source description
Last source check: No source check recorded

Project description

Explore the limits of epitaxial growth for InP-based materials (InGaAsP and InAlGaAs) using a newest-generation Aixtron epi reactor
Correlate epitaxial growth parameters to the electro-optical performance and reliability of active components such as lasers and amplifiers
Investigate the science behind yield and manufacturability by developing predictive models to connect the physics and chemistry of Metal Organic Vapour Phase Epitaxy to successful large-scale integration of PICs

Requirements and eligibility

See the source description and original listing for specific eligibility requirements.

Application documents

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Funding, benefits and conditions

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Contacts and supervision

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Before you apply

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How to apply

Apply via AcademicTransfer. Application deadline: 10 Nov 2026. Confirm the current requirements there.

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Source and listing information

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Frequently asked questions

What type of opportunity is this and where is it based?: This is a PhD position at Eindhoven University of Technology, based in Eindhoven, Netherlands.
What is the application deadline?: Application deadline: 10 Nov 2026. Confirm the current deadline on the original listing.
Is funding or compensation specified?: Paid. Check the original listing for exact amounts and conditions.
Where can I apply and check the full requirements?: Use the application link to AcademicTransfer. The original listing provides the full requirements, documents and application instructions.

PhD in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits